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FGL35N120FTD 1200V, 35A Trench IGBT
February 2010
FGL35N120FTD
1200V, 35A Trench IGBT
Features
* Field Stop Trench Technology * High Speed Switching * Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35A * High Input Impedance
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General Description
Using advanced field stop trench technology, Fairchild's 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.
Applications
* Induction Heating And Microwave Oven * Soft Switching Applications
C
G E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 100oC
o
Ratings
1200 25 70 35 105 40 368 147 -55 to +150 -55 to +150 300
Units
V V A A A A W W
o o o
C C C
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Ratings
0.34 0.9 25
Units
o o
C/W C/W
oC/W
(c)2010 Fairchild Semiconductor Corporation
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FGL35N120FTD Rev. A
FGL35N120FTD 1200V, 35A Trench IGBT
Package Marking and Ordering Information
Device Marking
FGL35N120FTD
Device
FGL35N120FTDTU
Package
TO-264
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
1200 -
-
1 250
V mA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 35mA, VCE = VGE IC = 35A, VGE = 15V IC = 35A, VGE = 15V, TC = 125oC 3.5 6.2 1.68 2.0 7.5 2.2 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 5090 180 95 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 35A, VGE = 15V VCC = 600V, IC = 35A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC VCC = 600V, IC = 35A, RG = 10, VGE = 15V, Inductive Load, TC = 25oC 34 63 172 107 2.5 1.7 4.2 33 66 180 146 3.1 2.1 5.2 210 42 101 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGL35N120FTD Rev. A
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FGL35N120FTD 1200V, 35A Trench IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Irr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage IF = 35A
Test Conditions
TC = 25oC TC = 125oC TC = 25oC TC = 125oC 125oC TC = 25oC TC = TC = 25oC TC = 125oC
Min.
-
Typ.
2.7 2.5 337 520 7.6 12.9 1292 3377
Max
3.4 -
Units
V
Diode Reverse Recovery Time IF = 35A, di/dt = 200A/s
ns
Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
A
Qrr
nC
FGL35N120FTD Rev. A
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FGL35N120FTD 1200V, 35A Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180 150
Collector Current, IC [A]
TC = 25 C
o
Figure 2. Typical Output Characteristics
180
TC = 125 C
o
20V
17V 15V
20V
17V 15V 12V
150
Collector Current, IC [A]
12V
120 90
10V
120 90
10V
60
9V
60
9V
30
VGE = 8V
30 0 0
VGE = 8V
0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8
2 4 6 Collector-Emitter Voltage, VCE [V]
8
Figure 3. Typical Saturation Voltage Characteristics
120 100
Collector Current, IC [A]
Common Emitter VGE = 15V TC = 25 C
Figure 4. Transfer Characteristics
120 100
Collector Current, IC [A]
Common Emitter VCE = 20V TC = 25 C TC = 125 C
o o
o
80 60 40 20 0 0
TC = 125 C
o
80 60 40 20 0
1 2 3 Collector-Emitter Voltage, VCE [V]
4
4
6 8 10 Gate-Emitter Voltage,VGE [V]
12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.8
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V 70A
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
2.6 2.4 2.2 2.0
TC = 25 C
o
16
12
35A
1.8 1.6 1.4 1.2 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
IC = 18A
8
70A 35A
4
IC = 18A
0
4
8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGL35N120FTD Rev. A
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FGL35N120FTD 1200V, 35A Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
o
Figure 8. Load Current vs. Frequency
150
VCC = 600V load Current : peak of square wave
Collector-Emitter Voltage, VCE [V]
TC = 125 C
16
Load Current [A]
120
12
90
8
70A 35A
60
4
30 Duty cycle : 50%
T = 100 C
C o
0 4
IC = 18A
0
20
Power Dissipation = 147W
8 12 16 Gate-Emitter Voltage, VGE [V]
1
10 100 Frequency [kHz]
1000
Figure 9. Capacitance Characteristics
8000
Common Emitter VGE = 0V, f = 1MHz
Figure 10. Gate Charge Characteristics
15
Common Emitter
Gate-Emitter Voltage, VGE [V]
Cies
TC = 25 C
o
TC = 25 C
o
12
VCC = 200V
600V
6000
Capacitance [pF]
400V
9
4000
Coes
6
2000
Cres
3
0 1 10 Collector-Emitter Voltage, VCE [V]
30
0 0 50 100 150 200 Gate Charge, Qg [nC] 250
Figure 11. SOA Characteristics
400 100
Collector Current, Ic [A]
10s
Figure 12. Turn-on Characteristics vs. Gate Resistance
200
10
100s 1ms 10 ms DC *Notes:
Switching Time [ns]
100
tr
1
td(on)
0.1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
Common Emitter VCC = 600V, VGE = 15V IC = 35A TC = 25 C TC = 125 C
o o
0.01 1
20
10 100 1000 Collector-Emitter Voltage, VCE [V]
4000
0
10
20
30
40
50
Gate Resistance, RG []
FGL35N120FTD Rev. A
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FGL35N120FTD 1200V, 35A Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Gate Resistance
2000
Common Emitter VCC = 600V, VGE = 15V IC = 35A
Figure 14. Turn-on Characteristics vs. Collector Current
200
1000
Switching Time [ns]
Switching Time [ns]
TC = 25 C TC = 125 C
o
o
100
td(off)
tr
tf
td(on)
Common Emitter VGE = 15V, RG = 10 TC = 25 C TC = 125 C
o o
100
50 0 10 20 30 Gate Resistance, RG [] 40 50
10 10
20
30 40 50 Collector Current, IC [A]
60
70
Figure 15. Turn-off Characteristics vs. Collector Current
600
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Figure 16.Switching Loss vs. Gate Resistance
8
Eon
td(off)
Switching Loss [mJ]
Switching Time [ns]
TC = 125 C
Eoff
1
100
tf
Common Emitter VCC = 600V, VGE = 15V IC = 35A TC = 25 C TC = 125 C
o o
50 10
0.3
20 30 40 50 Collector Current, IC [A] 60 70
0
10
20 30 40 Gate Resistance, RG []
50
Figure 17. Switching Loss vs. Collector Current
10
Figure 18. Turn off Switing SOA Characteristics
200 100
Eon
Eoff
Collector Current, IC [A]
Switching Loss [mJ]
10
1
Common Emitter VGE = 15V, RG = 10 TC = 25 C TC = 125 C
o o
Safe Operating Area
0.3 10
1 20 30 40 50 Collector Current, IC [A] 60 70 1
VGE = 15V, TC = 125 C
o
10 100 1000 3000 Collector-Emitter Voltage, VCE [V]
FGL35N120FTD Rev. A
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FGL35N120FTD 1200V, 35A Trench IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
50
Figure 20. Reverse Recovery Current
8
Reverse Recovery Currnet, Irr [A]
di/dt = 200A/s
Forward Current, IF [A]
7
10
TJ = 125 C
o
6
TJ = 25 C
o
5
di/dt = 100A/s
1
TC = 25 C
o
4
0.2 0.0
TC = 125 C
o
0.5
1.0 1.5 2.0 Forward Voltage, VF [V]
2.5
3.0
3 10
20 30 Forward Current, IF [A]
40
Figure 21. Stored Charge
1.4
Stored Recovery Charge, Qrr [C]
Figure 22. Reverse Recovery Time
600
Reverse Recovery Time, trr [ns]
1.2
500
di/dt = 100A/s
di/dt = 200A/s
400
di/dt = 200A/s
1.0
di/dt = 100A/s
300
0.8
200
0.6 10
20
30
40
100 10
20
30
40
Forward Current, IF [A]
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2 0.1 0.05
0.01 0.02
0.01 single pulse
PDM t1 t2
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
0.001 1E-5
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGL35N120FTD Rev. A
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FGL35N120FTD 1200V, 35A Trench IGBT
Mechanical Dimensions
Dimensions in Millimeters
FGL35N120FTD Rev. A
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FGL35N120FTD 1200V, 35A Trench IGBT
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPMTM AccuPowerTM FlashWriter(R) * (R)* PowerTrench(R) FPSTM Auto-SPMTM PowerXSTM F-PFSTM Build it NowTM The Power Franchise(R) (R) Programmable Active DroopTM FRFET(R) CorePLUSTM Global Power ResourceSM QFET(R) CorePOWERTM Green FPSTM QSTM CROSSVOLTTM TinyBoostTM Green FPSTM e-SeriesTM Quiet SeriesTM CTLTM TinyBuckTM GmaxTM RapidConfigureTM Current Transfer LogicTM TinyCalcTM GTOTM DEUXPEED(R) TinyLogic(R) Dual CoolTM IntelliMAXTM TM TINYOPTOTM Saving our world, 1mW/W/kW at a timeTM EcoSPARK(R) ISOPLANARTM TinyPowerTM SignalWiseTM EfficentMaxTM MegaBuckTM TinyPWMTM SmartMaxTM EZSWITCHTM* MICROCOUPLERTM TinyWireTM TM* SMART STARTTM MicroFETTM TriFault DetectTM SPM(R) MicroPakTM TRUECURRENTTM* STEALTHTM MillerDriveTM (R) SerDesTM SuperFETTM MotionMaxTM Fairchild(R) SuperSOTTM-3 Motion-SPMTM Fairchild Semiconductor(R) SuperSOTTM-6 OPTOLOGIC(R) UHC(R) FACT Quiet SeriesTM OPTOPLANAR(R) SuperSOTTM-8 (R) (R) Ultra FRFETTM FACT SupreMOSTM UniFETTM FAST(R) SyncFETTM VCXTM FastvCoreTM Sync-LockTM PDP SPMTM VisualMaxTM FETBenchTM XSTM
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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I45
Preliminary
First Production
No Identification Needed Obsolete FGL35N120FTD Rev. A
Full Production Not In Production
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